Aryana Bhattacharyya
Mary Gates Research Scholar
Autumn 2024
Project
Characterizing generalized anomalous Hall crystals in twisted bilayer-trilayer graphene
Graphene, a single layer of carbon atoms, is a naturally abundant semiconductor that is turning heads for its electrical conductivity and tunable phase transitions at nano-scales. We are interested in studying different states of matter that arise in a specific graphene material: a bilayer sheet of graphene is stacked atop a trilayer sheet of graphene at some small relative angle. This particular geometric configuration gives rise to a pair of flat electronic bands near the Fermi energy level where we can observe electron-electron interactions displaying novel phases of matter. One such state, the anomalous Hall crystal, has been observed in this system once before; our research seeks to evaluate the reproducibility and relative angle dependence of this previously observed state and better characterize electron behavior in twisted bilayer-trilayer Bernal graphene. This work contributes to our rapidly evolving understanding of electron behavior in two-dimensional materials, which has future implications for electronic innovations.